Datasheet BSS308PE (Infineon) - 3

BSS308PE Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics
Input capacitance C iss - 376 500 pF V Output capacitance C GS=0 V, V DS=-15 V, oss - 196 261 f =1 MHz Reverse transfer capacitance Crss - 12 18 Turn-on delay time t d(on) - 5.6 - ns Rise time t V r DD=-15V, - 7.7 - V GS=-10 V, Turn-off delay time t d(off) - 15.3 - I D=-2 A, R G=6 Ω Fall time t f - 2.8 - Gate Charge Characteristics Gate to source charge Q gs - -1.2 - nC Gate to drain charge Q gd - -0.6 - V DD=-15 V, I D=-2 A, Gate charge total V Q GS=0 to -10 V g - -5.0 - Gate plateau voltage V plateau - -3.1 - V
Reverse Diode
Diode continous forward current I S - - -0.4 A T A=25 °C Diode pulse current I S,pulse - - -8.4 V Diode forward voltage GS=0 V, I F=-2 A, V SD - -0.8 -1.1 V T j=25 °C Reverse recovery time t rr - 14 - ns V R=10 V, I F=-2 A, Reverse recovery charge di Q F/dt =100 A/µs rr - -5.9 - nC Rev 2.03 page 3 2011-07-08