Datasheet QSE113, QSE114 (Fairchild) - 2

PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 QSE114 ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Operating Temperature TOPR -40 to +100 °C Storage Temperature TSTG -40 to +100 °C Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Collector Emitter Voltage VCE 30 V Emitter Collector Voltage VEC 5 V Power Dissipation(1) PD 100 mW
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. λ = 880 nm (AlGaAs).
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Units
Peak Sensitivity λPS — 880 — nM Reception Angle Θ — ±25 — Deg. Collector Emitter Dark Current VCE = 10 V, Ee = 0 ICEO — — 100 nA Collector-Emitter Breakdown IC = 1 mA BVCEO 30 — — V Emitter-Collector Breakdown IE = 100 µA BVECO 5 — — V On-State Collector Current(5) E = 0.5 mW/cm2, V = 5 V IC(ON) 0.25 — 1.50 mA QSE113 e CE On-State Collector Current(5) E = 0.5 mW/cm2, V = 5 V IC(ON) 1.00 — — mA QSE114 e CE Saturation Voltage(5) E 2 e = 0.5 mW/cm , IC = 0.1 mA VCE(SAT) — — 0.4 V Rise Time tr — 8 — µs IC = 1mA, VCC = 5V, RL = 100Ω Fall Time tf — 8 — µs © 2002 Fairchild Semiconductor Corporation Page 2 of 4 5/1/02