TARGET NV6257650V Half-Bridge GaNFast™ Power ICFeatures GaNFast power IC • Two independent logic inputs with hysteresis • Enable input • Ultra-low standby current • Wide V range CC • Low-side turn-on dV/dt slew rate control PQFN 6x8 mmSimplified Schematic • 200 V/ns dV/dt immunity • ESD, high-side UVLO, shoot-through protection Description • Floating high-side with internal level shift This GaN Power IC is a high performance, easy-to- • Integrated high-side bootstrap use, 650V half-bridge GaNFast™ power IC, • High-frequency operation up to 2 MHz optimized for high-frequency, soft-switching topologies. 650V eMode GaN FETs The feature-rich, monolithically-integrated GaNFast • 275 mΩ high-side FET power IC with simple logic inputs, harnesses two • 175 mΩ low-side FET high-performance eMode GaN FETs (275 mΩ high- • Zero reverse recovery charge side, 175 mΩ low-side) to create the fastest, Small, low-profile SMT QFN smallest, most efficient powertrain in the world. • 6x8 mm footprint The highest dV/dt immunity, integrated protection • 0.85 mm profile features and industry-standard low-profile, low- inductance, 6x8 mm SMT QFN package combine to • Minimized package inductance enable designers to exploit GaN technology with Applications simple, quick, dependable solutions achieving breakthrough power density and efficiency. • AC-DC Navitas’ GaNFast power ICs extend the capabilities • DC-DC of traditional topologies such as flyback, half-bridge, • Active Clamp Flyback buck/boost, resonant, etc. to MHz+ and enable the • Buck commercial introduction of breakthrough designs. • Boost Typical Application Circuit: Active Clamp Flyback Revised 8-1-18 Navitas Semiconductor Confidential Page 1
