MITSUBISHI HVIGBT MODULESCM2400HCB-34NHIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPECM2400HCB-34N ● IC... 2400 A ● VCES .. 1700 V ● Insulated Type ● 1-element in a Pack ● AISiC Baseplate ● Trench Gate IGBT : CSTBTTM ● Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAMDimensions in mm 190 ±0.5 171±0.1 57±0.1 57±0.1 57 6 - M8 NUTS ±0.1 +0.1 –0.2 C C C 20 C C C C ±0.1 ±0.5 ±0.2 40 124 140 G E CM E E E E E E C E G CIRCUIT DIAGRAM 20.25 ±0.2 41.25 ±0.3 8 - φ ±0.1 7 MOUNTING HOLES 3 - M4 NUTS 79.4 ±0.3 screwing depth min. 16.5 15 ±0.2 61.5 ±0.3 61.5 ±0.3 screwing depth 40 ±0.3 13±0.2 min. 7.7 5.2 ±0.2 +1 0 ±0.15 ±0.5 5 38 +1 0 LABEL 28 29.5 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 1
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