Datasheet CM2400HCB-34N (Mitsubishi Electric) - 7
| Производитель | Mitsubishi Electric |
| Описание | 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
| Страниц / Страница | 7 / 7 — MITSUBISHI HVIGBT MODULES. CM2400HCB-34N. HIGH POWER SWITCHING USE. … |
| Формат / Размер файла | PDF / 97 Кб |
| Язык документа | английский |
MITSUBISHI HVIGBT MODULES. CM2400HCB-34N. HIGH POWER SWITCHING USE. INSULATED TYPE. SHORT CIRCUIT
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Текстовая версия документа
MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE SHORT CIRCUIT REVERSE BIAS SAFE OPERATING AREA SAFE OPERATING AREA (RBSOA) (SCSOA)
6000 40000 VCC ≤ 1200V, VGE = ±15V VCC ≤ 1000V, VGE = ±15V Tj = 125°C, RG (off) ≥ 1.1Ω RG (on) ≥ 0.8Ω, RG (off) ≥ 1.1Ω Tj = 125°C, tpsc ≤ 10µs 5000 ) 30000 ( A ( A 4000 3000 20000 2000 COLLECTOR CURRENT COLLECTOR CURRENT 10000 1000 0 0 0 500 1000 1500 2000 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA)
3000 VCC ≤ 1200V, di/dt ≤ 9000A/µs Tj = 125°C ) 2500 ( A 2000 1500 1000 REVERSE RECOVERY CURRENT 500 00 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 7
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