Datasheet NJW21193G, NJW21194G (ON Semiconductor) - 2

link to page 2 NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
http://onsemi.com Features
• Total Harmonic Distortion Characterized
16 AMPERES
• High DC Current Gain
COMPLEMENTARY SILICON
• Excellent Gain Linearity
POWER TRANSISTORS
• High SOA
250 VOLTS, 200 WATTS
• These Devices are Pb−Free and are RoHS Compliant
PNP NPN MAXIMUM RATINGS
COLLECTOR 2, 4 COLLECTOR 2, 4
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage V 1 1 CBO 400 Vdc BASE BASE Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc EMITTER 3 EMITTER 3 Collector Current − Continuous IC 16 Adc Collector Current − Peak (Note 1) ICM 30 Adc
MARKING DIAGRAM
Base Current − Continuous IB 5.0 Adc 4 Total Power Dissipation @ TC = 25°C PD 200 W Derate Above 25°C 1.6 W/°C Operating and Storage Junction TJ, Tstg −   65 to °C NJW2119xG Temperature Range +150
TO−3P
AYWW Stresses exceeding Maximum Ratings may damage the device. Maximum
CASE 340AB
Ratings are stress ratings only. Functional operation above the Recommended
STYLES 1,2,3
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. 1
THERMAL CHARACTERISTICS
2 3
Characteristic Symbol Max Unit
1 2 3 Thermal Resistance, R x = 3 or 4 qJC 0.625 °C/W Junction−to−Case G = Pb−Free Package A = Assembly Location Thermal Resistance, RqJA 40 °C/W Y = Year Junction−to−Ambient WW = Work Week
ORDERING INFORMATION Device Package Shipping
NJW21193G TO−3P 30 Units/Rail (Pb−Free) NJW21194G TO−3P 30 Units/Rail (Pb−Free) © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2013 − Rev. 1 NJW21193/D