□ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 V =520V CE I =5A C 12 1000 Cies )) 9 (VFE G(pVe 100 c n Coes 6 ita c a p a 10 3 C Cres 0 1 0 4 8 12 16 20 0 8 16 24 32 40 Q (nC)gV(V)CEFigure 7: Gate-Charge CharacteristicsFigure 8: Capacitance Characteristic 100 80 ) (W n 60 tio a p s is 40 r D e w o P 20 0 25 50 75 100 125 150 T(°C)CASEFigure 10: Power Disspation as a Function ofCase 12 1E-03 10 1E-04 ) (A 8 I C 1E-05 g) V =650V tin(A CE 6 ) (S 1E-06 t raEnI Crre 4 u 1E-07 V =520V CE C 2 1E-08 0 1E-09 25 50 75 100 125 150 0 25 50 75 100 125 150 T(°C)Temperature (°C )CASEFigure 11: Current De-ratingFigure 12: Diode Reverse Leakage Current vs.Junction Temperature Rev.1.0: April 2015 www.aosmd.com Page 4 of 9