Datasheet AOK30B65M2 (Alpha & Omega)

AOK30B65M2 650V, 30A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary
• Latest AlphaIGBT (α IGBT) technology VCE 650V • 650V breakdown voltage IC (TC=100°C) 30A • Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25°C) 1.66V • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness
Applications
• Motor Drives • Servo and General Purpose Inverters • Other Hard Switching Applications C
TO-247
G E E C G
AOK30B65M2 Orderable Part Number Package Type Form Minimum Order Quantity
AOK30B65M2 TO247 Tube 240
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOK30B65M2 Units
Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C 60 I C A Current TC=100°C 30 Pulsed Collector Current, Limited by TJmax I CM 90 A Turn off SOA, VCE 650V, Limited by T ≤ Jmax I LM 90 A Continuous Diode TC=25°C 60 I F A Forward Current TC=100°C 30 Diode Pulsed Current, Limited by TJmax I FM 90 A Short circuit withstanding time 1) t SC 5 µs VGE=15V, VCC 400V, T 175°C ≤ J≤ TC=25°C 300 P D W Power Dissipation TC=100°C 150 Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering T L 300 °C purpose, 1/8" from case for 5 seconds
Thermal Characteristics Parameter Symbol AOK30B65M2 Units
Maximum Junction-to-Ambient R θ JA 40 °C/W Maximum IGBT Junction-to-Case R θ JC 0.5 °C/W Maximum Diode Junction-to-Case R θ JC 1 °C/W 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev.1.0: May 2015
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