Datasheet AOK30B65M2 (Alpha & Omega) - 7
Производитель | Alpha & Omega |
Описание | 650V, 30A Alpha IGBT With Soft And Fast Recovery Anti-Parallel Diode |
Страниц / Страница | 9 / 7 — TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. I rm. I (A). Figure 22: … |
Формат / Размер файла | PDF / 1.3 Мб |
Язык документа | английский |
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. I rm. I (A). Figure 22: Diode Reverse Recovery Time and

40 предложений от 14 поставщиков Дискретные полупроводники Транзисторы — биполярные с изолированным затвором (IGBT) — одиночные |
| AOK30B65M2
| от 269 ₽ | |
| AOK30B65M2 Alpha & Omega | от 324 ₽ | |
| AOK30B65M2
| 415 ₽ | |
| AOK30B65M2 Alpha & Omega | 448 ₽ | |
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500 50 600 15 175 C ° 2800 40 480 12 175 C ° T
) )
rr 2100 30 360 9
s C
25 C °
) (n (n (A rr S rr T Q
25 C °
I rm
1400 Q 20 240 6 rr 25 C ° 175 C ° 700 10 120 3 175 C ° I S 25 C ° rm 0 0 0 0 10 20 30 40 50 60 10 20 30 40 50 60
I (A) I (A) F F Figure 22: Diode Reverse Recovery Time and Figure 21: Diode Reverse Recovery Charge and Peak Softness Factor vs. Conduction Current Current vs. Conduction Current (V =15V, V =400V, di/dt=200A/ (V =15V, V =400V, di/dt=200A/
µ
s)
µ
s) GE CE GE CE
3500 75 600 20 2800 175 C ° 60 480 16 175 C ° Trr
) )
2100 45 360 12
C s ) (n
Qrr
(n
25 C °
(A rr S rr Q T I rm
1400 30 240 25 C ° 8 175 C ° 175 C ° 700 15 120 4 Irm S 25 C ° 25 C ° 0 0 0 0 200 300 400 500 600 700 800 200 300 400 500 600 700 800
di/dt (A/
µ
s) di/dt (A/
µ
s) Figure 23: Diode Reverse Recovery Charge and Figure 24: Diode Reverse Recovery Time and Peak Current vs. di/dt Softness Factor vs. di/dt (V =15V, V =400V, I =30A) (V =15V, V =400V, I =30A) GE CE F GE CE F
Rev.1.0: May 2015
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