Datasheet AOT5B65M1, AOB5B65M1 (Alpha & Omega) - 2

Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V TJ=25°C - 1.57 1.98 V CE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=5A TJ=125°C - 1.87 - V TJ=175°C - 2.05 - TJ=25°C - 1.8 2.25 V F Diode Forward Voltage VGE=0V, IC=5A TJ=125°C - 1.79 - V TJ=175°C - 1.73 - V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA - 5.1 - V TJ=25°C - - 10 I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V T µ J=125°C - - 100 A TJ=175°C - - 5000 I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g Forward Transconductance V FS CE=20V, IC=5A - 4.1 - S
DYNAMIC PARAMETERS
C ies Input Capacitance - 348 - pF C Output Capacitance V oes GE=0V, VCC=25V, f=1MHz - 36 - pF C res Reverse Transfer Capacitance - 13 - pF Q g Total Gate Charge - 14 - nC Q ge Gate to Emitter Charge VGE=15V, VCC=520V, IC=5A - 3 - nC Q gc Gate to Collector Charge - 6.5 - nC VGE=15V, VCC=400V, I C(SC) Short circuit collector current - 30 - A tsc 5us, T 175°C ≤ J≤ R g Gate resistance VGE=0V, VCC=0V, f=1MHz - 6 - Ω
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
t D(on) Turn-On DelayTime - 8.5 - ns t r Turn-On Rise Time - 13 - ns t D(off) Turn-Off Delay Time T - 106 - ns J=25°C t Turn-Off Fall Time V f GE=15V, VCC=400V, IC=5A, - 18 - ns E R on Turn-On Energy G=60Ω - 0.08 - mJ E off Turn-Off Energy - 0.07 - mJ E total Total Switching Energy - 0.15 - mJ t rr Diode Reverse Recovery Time - 195 - ns TJ=25°C Q rr Diode Reverse Recovery Charge - 0.24 - µC IF=5A, dI/dt=200A/µs, VCC=400V I rm Diode Peak Reverse Recovery Current - 2.78 - A
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
t D(on) Turn-On DelayTime - 7 - ns t r Turn-On Rise Time - 14 - ns t D(off) Turn-Off Delay Time T - 130 - ns J=175°C t Turn-Off Fall Time V f GE=15V, VCC=400V, IC=5A, - 31 - ns E R on Turn-On Energy G=60Ω - 0.09 - mJ E off Turn-Off Energy - 0.12 - mJ E total Total Switching Energy - 0.21 - mJ t rr Diode Reverse Recovery Time - 273 - ns TJ=175°C Q rr Diode Reverse Recovery Charge - 0.42 - µC IF=5A, dI/dt=200A/µs, VCC=400V I rm Diode Peak Reverse Recovery Current - 3.6 - A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015
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