Datasheet AOT5B65M1, AOB5B65M1 (Alpha & Omega) - 7
Производитель | Alpha & Omega |
Описание | 650V, 5A Alpha IGBT With Soft And Fast Recovery Anti-Parallel Diode |
Страниц / Страница | 9 / 7 — TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. I rm. I (A). Figure 21: … |
Формат / Размер файла | PDF / 1.4 Мб |
Язык документа | английский |
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. I rm. I (A). Figure 21: Diode Reverse Recovery Charge and

34 предложений от 13 поставщиков Дискретные полупроводники Транзисторы — биполярные с изолированным затвором (IGBT) — одиночные |
| AOB5B65M1
| 81 ₽ | |
| AOB5B65M1 Alpha & Omega | от 108 ₽ | |
| AOB5B65M1 Aos | 112 ₽ | |
| AOB5B65M1
| 143 ₽ | |
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Текстовая версия документа
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800 25 400 25 175 C ° 640 20 320 20 175 C ° 25 C ° Trr
)
480 15 240 15
C ) ) (n S (A rr
Q
(n S
rr 25 C
I rm rr
°
Q T
320 10 160 10 25 C ° S 175 C I ° rm 160 5 80 5 175 C ° 25 C ° 0 0 0 0 2 4 6 8 10 2 4 6 8 10
I (A) F I (A) F Figure 21: Diode Reverse Recovery Charge and Figure 22: Diode Reverse Recovery Time and Peak Current vs. Conduction Current Softness Factor vs. Conduction Current (V =15V,V =400V, di/dt=200A/
µ
s) GE CE (V =15V,V =400V, di/dt=200A/
µ
s) GE CE
600 30 350 35 175 C ° 500 25 280 28 T 175 C ° rr 400 20
) )
210 25 C ° 21
C
Qrr
) S (n (n
300 25 C ° 15
(A rr rr S I rm Q T
140 14 175 C ° 200 10 175 C ° 70 7 S 100 5 25 C ° 25 C I ° rm 0 0 0 0 100 200 300 400 500 600 100 200 300 400 500 600
di/ i d / t t ( A ( / A
µ
S
µ
) di/ i d / t t ( A ( / A
µ
S
µ
) Figure 23: Diode Reverse Recovery Charge and Figure 24: Diode Reverse Recovery Time and Peak Current vs. di/dt Softness Factor vs. di/dt (V =15V,V =400V,I =5A) GE CE F (V =15V,V =400V,I =5A) GE CE F
Rev.1.0: April 2015
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