AOTF10B65M2 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 V =520V CE I =10A C 12 1000 Cies 9 ) (V C (pF) oes Ee 100 GVnc 6 a it c pa a 10 Cres 3 C 0 1 0 5 10 15 20 25 30 0 8 16 24 32 40 Q (nC)gV(V)CEFigure 7: Gate-Charge CharacteristicsFigure 8: Capacitance Characteristic 50 40 ) (W 30 tion pa s is D 20 r ePow 10 0 25 50 75 100 125 150 T(°C)CASEFigure 10: Power Disspation as a Function of Case 20 1E-03 1E-04 16 ) (A 1E-05 I C 12 g) V =650V CE in(A ) 1E-06 rat(S 8 I CE V =520V CE 1E-07 Current 4 1E-08 0 1E-09 25 50 75 100 125 150 0 25 50 75 100 125 150 T(°C)Temperature (°C)CASEFigure 11: Current De-ratingFigure 12: Diode Reverse Leakage Current vs.Junction Temperature Rev.2.0: February 2021 www.aosmd.com Page 4 of 9