Datasheet AOTF10B65M2 (Alpha & Omega) - 7
Производитель | Alpha & Omega |
Описание | 650V, 10A Alpha IGBT With Soft And Fast Recovery Anti-Parallel Diode |
Страниц / Страница | 9 / 7 — AOTF10B65M2. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. (nC). (ns. I … |
Формат / Размер файла | PDF / 1.2 Мб |
Язык документа | английский |
AOTF10B65M2. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. (nC). (ns. I rm. I (A). Figure 21: Diode Reverse Recovery Charge and

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AOTF10B65M2
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000 25 360 30 150°C 300 25 800 20 T 150°C rr 240 20 600 15
) ) (nC)
25°C
(ns
25°C
(A rr
180 15
rr S Q I rm T
Q 400 rr 10 120 10 25°C 150°C I S rm 200 5 60 5 25°C 150°C 0 0 0 0 5 8 11 14 17 20 5 8 11 14 17 20
I (A) F I (A) F Figure 21: Diode Reverse Recovery Charge and Figure 22: Diode Reverse Recovery Time and Peak Current vs. Conduction Current Softness Factor vs. Conduction Current (V =15V, V =400V, di/dt=200A/
m
s) GE CE (V =15V, V =400V, di/dt=200A/
m
s) GE CE
1000 30 360 30 300 25 150°C 800 24 150°C 240 20
)
600 Q 18
)
rr
)
T 25°C
(nC
25°C
(ns
rr
(A rr
180 15
rr S Q I rm T
400 12 150°C 150°C 120 10 200 Irm 6 60 S 5 25°C 25°C 0 0 0 0 200 300 400 500 600 700 800 200 300 400 500 600 700 800
di/dt (A/
m
s) di/dt (A/
m
s) Figure 23: Diode Reverse Recovery Charge and Figure 24: Diode Reverse Recovery Time and Softness Peak Current vs. di/dt Factor vs. di/dt (V =15V, V =400V, I =10A) GE CE F (V =15V, V =400V, I =10A) GE CE F
Rev.2.0: February 2021
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