Datasheet BIDD05N60T (Bourns) - 3

BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Diode Switching Characteristics (TC = 25 °C, unless otherwise specified) Value Parameter (TC = 25 °C) Symbol Conditions Unit Min. Typ. Max.
Reverse Recovery Time trr dl — 40 — ns F/dt = 200 A/μs I Reverse Recovery Charge Q F = 5.0 A rr — 80 — nC
Electrical Characteristic Performance Typical Output Characteristics Forward Bias Safe Operating Area
40 102 17 V Common Emitter TC = 25 °C 30 15 V 101 10 µs (A) 100 µs C (A) C 1 ms 10 ms 20 13 V 100 Collector Current – I 11 V 10 Collector Current – I 10-1 VGE = 9 V Note: TC = 25 °C 0 10-2 0 1 2 3 4 5 6 7 8 9 10 11 100 101 102 103 Collector-emitter Voltage – VCE (V) Collector-emitter Voltage – VCE (V)
Typical Saturation Voltage Characteristics Typical Transfer Characteristics
20 30 Common Emitter Common Emitter V V GE = 15 V CE = 10 V 25 16 TC = 25 °C (A) TC = 25 °C (A) C C 20 12 TC = 125 °C 15 8 TC = 125 °C 10 Collector Current – I Collector Current – I 4 5 0 0 0 1 2 3 4 0 5 10 15 Collector-emitter Voltage – VCE (V) Gate-emitter Voltage – VGE (V) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.