BIDD05N60T Insulated Gate Bipolar Transistor (IGBT)Electrical Characteristic Performance (continued)Typical Switching Loss Characteristics vs ICTypical Diode IF vs VF 10000 10 Common Emitter VCC = 400 V, VGE = 15 V RG = 10 Ω, TC = 25 °C (A) 1000 F E(on) Tc = 125 °C Tc = 25 °C E(off) 100 Switching Loss (µJ) Forward Current – I 10 1 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 Collector Current – I Forward Voltage – V C (A) F (V) Typical Reverse Recovery Time vs IFTypical Reverse Recovery Charge vs IF 60 120 100 (ns) (nC) 50 rr rr di/dt = 200 A/µs di/dt = 100 A/µs 80 40 60 di/dt = 200 A/µs di/dt = 100 A/µs 40 30 Reverse Recovery Time – t 20 Reverse Recovery Charge – Q 20 0 3 4 5 6 7 8 9 10 3 4 5 6 7 8 9 10 Forward Current – IF (A) Forward Current – IF (A) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
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