Datasheet BIDD05N60T (Bourns) - 9

BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Packaging Specifications
16.5 ± 0.2 (.650 ± .008) 332 (13.071) MAX. 2.0 ± 0.2 (.079 ± .008) 1.75 ± 0.1 4.0 ± 0.2 8.0 ± 0.2 1.5 DIA. MIN. 0.3 ± 0.05 (.069 ± .004) (.157 ± .008) (.315 ± .008) (.059) (.012 ± .002) 7.5 ± 0.1 (.295 ± .004) 10.5 ± 0.3 16 ± 0.3 (.413 ± .012) 1.5 (.630 ± .012) (.059) DIA. MIN. 2.7 ± 0.2 6.9 ± 0.2 (.106 ± .008) (.272 ± .008) MM USER DIRECTION OF FEED DIMENSIONS: (INCHES) QTY: 2500 PCS PER REEL
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REV. 07/22 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.