Datasheet BIDNW30N60H3 (Bourns) - 2

BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT) Static Electrical Characteristics (TC = 25 °C, Unless Otherwise Specified) Value Parameter Symbol Conditions Unit Min. Typ. Max.
Collector-Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 µA 600 — — V VGE = 15 V, IC = 30 A T Collector-Emitter Saturation Voltage V C= 25 °C — 1.65 2.0 CE(sat) V VGE = 15 V, IC = 30 A TC= 125 °C — 1.9 — I Diode Forward On-Voltage V F = 12 A, TC = 25 °C — 1.8 — V F IF = 12 A, TC = 125 °C — 1.4 — V Gate Threshold Voltage VGE(th) VCE = VGE, IC = 250 µA 4.0 5.0 6.5 V Collector Cut-off Current ICES VGE = 0 V, VCE = 600 V — — 200 µA Gate-Emitter Leakage Current IGES VCE = 0 V, VGE = ±20 V — — ±400 nA
Dynamic Electrical Characteristics (TC = 25 °C, Unless Otherwise Specified) Value Parameter Symbol Conditions Unit Min. Typ. Max.
Input Capacitance Cies — 1780 — VCE = 30 V, VGE = 0 V, Output Capacitance Coes f = 1 MHz — 100 — pF Reverse Transfer Capacitance Cres — 32 — Total Gate Charge Qg — 76 — VCE = 400 V, VGE = 15 V Gate-Emitter Charge Qge I — 20 — nC C = 30.0 A Gate-Collector Charge Qgc — 38 —
IGBT Switching Characteristics (Inductive Load, TC = 25 °C, unless otherwise specified) Value Parameter (TC = 25 °C) Symbol Conditions Unit Min. Typ. Max.
Turn-on Delay Time td(on) — 30 — ns Current Rise Time tr — 105 — ns Turn-off Delay Time td(off) — 67 — ns VCE = 400 V, VGE = 15 V Current Fall Time tf I — 100 — ns C = 30.0 A, RG = 10 Ω Turn-on Switching Energy Eon — 1.85 — mJ Turn-off Switching Energy Eoff — 0.45 — mJ Total Switching Energy Ets — 2.3 — mJ Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.