Datasheet BIDNW30N60H3 (Bourns) - 4

BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT) Electrical Characteristic Performance (continued) Typical VCE(sat) vs VGE @ TC = 25 °C Typical VCE(sat) vs VGE @ TC = 125 °C
15 15 Common Emitter Common Emitter TC = 25 °C TC = 125 °C (V) (V) CE(sat) I CE(sat) I 10 C = 15 A C = 15 A I 10 C = 30 A IC = 30 A IC = 60 A IC = 60 A 5 5 Collector-emitter Voltage – V Collector-emitter Voltage – V 0 0 4 8 12 16 20 4 8 12 16 20 Gate-emitter Voltage – VGE (V) Gate-emitter Voltage – VGE (V)
Typical VCE(sat) vs Case Temperature Typical Capacitance Characteristics
3.0 2500 Common Emitter Common Emitter VGE = 15 V VGE = 0 V, f = 1 MHz (V) 60 A 2000 TC = 25 °C Cies 2.5 CE(sat) 1500 2.0 1000 30 A Capacitance (pF) Coes 1.5 500 Collector-emitter Voltage – V IC = 15 A Cres 1.0 0 25 50 75 100 125 1 10 100 Case Temperature – TC (°C) Collector-emitter Voltage – VCE (V) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.