Datasheet BIDNW30N60H3 (Bourns) - 5

BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT) Electrical Characteristic Performance (continued) Typical Gate Charge Characteristic Typical Switching Time Characteristics vs IC
15 1000 Common Emitter Common Emitter T V C = 25 °C CC = 400 V, VGE = 15 V R , T G = 10 Ω C = 25 °C 12 (V) tr GE t 100 f 9 td(off) td(on) 6 10 Switching Time (ns) Gate-emitter Voltage – V 3 VCC = 100 V VCC = 200 V VCC = 300 V 0 1 0 20 40 60 80 0 10 20 30 40 50 60 Gate Charge – Qg (nC) Collector Current – IC (A)
Typical Switching Time Characteristics vs RG Typical Switching Loss vs RG
1000 10000 Common Emitter Common Emitter VCC = 400 V, VGE = 15 V VCC = 400 V, VGE = 15 V IC = 30 A, TC = 25 °C IC = 30 A, TC = 25 °C E(on) td(off) tr 100 1000 tf E(off) Switching Time (ns) Switching Loss (µJ) td(on) 10 100 0 10 20 30 40 50 0 10 20 30 40 50 Gate Resistance – RG (Ω) Gate Resistance – RG (Ω) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.