BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT)Electrical Characteristic Performance (continued)Typical Switching Loss Characteristics vs ICTypical Diode IF vs VF 10000 100 Common Emitter V E(on) CC = 400 V, VGE = 15 V RG = 10 Ω, TC = 25 °C 1000 (A) F TC = 125 °C E(off) T 10 C = 25 °C 100 Switching Loss (µJ) Forward Current – I 10 1 0 10 20 30 40 50 60 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector Current – IC (A) Forward Voltage – VF (V) Typical Reverse Recovery Time vs IFTypical Reverse Recovery Charge vs IF 45 60 55 (ns) (nC) rr 50 rr di/dt = 200 A/µs 40 45 di/dt = 100 A/µs 40 35 35 di/dt = 200 A/µs di/dt = 100 A/µs 30 Reverse Recovery Time – t Reverse Recovery Charge – Q 25 30 20 0 20 40 60 0 20 40 60 Forward Current – IF (A) Forward Current – IF (A) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
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