BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT)Electrical Characteristic Performance (continued)IGBT Transient Thermal Impedance vs tp(on) Duration (D=tp/T) 100 (°C/W) 50 % thJC 10-1 10 % 5 % 10-2 1 % Transient Thermal Impedance - Z Single Pulse 10-3 10-6 10-5 10-4 10-3 10-2 100 10-1 tp, Pulse Duration (s) Diode Transient Thermal Impedance vs tp(on) Duration (D=tp/T) 101 (°C/W) 100 thJC 50 % 10-1 10 % 5 % 1 % 10-2 Transient Thermal Impedance - Z Single Pulse 10-310-6 10-5 10-4 10-3 10-2 100 10-1 tp, Pulse Duration (s) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
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