BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT)Electrical Characteristic Performance (continued)Inductive Load Test CircuitForward Bias Safe Operating Area 103 D L 102 10 µs (A) c IC 100 µs VCE VCC 101 1 ms 10 ms RG D.U.T. Collector Current – I 100 Note: VGE 1. Max. junction temperature: 150 °C 2. Max. reference temperature: 25 °C 10-1 100 101 102 103 Collector-emitter Voltage – VCE (V) L = 1.87 mH, VCE = 400 V, VGE = 15 V, IC = 30 A, RG = 10 Ω How to OrderB I D NW 30 N 60 H 3Environmental Characteristics B = Bourns® ESD Class (HBM) ...2 I = IGBT Type D = Discrete Packaging Code NW = TO-247N-3L Current Rating 30 = 30 A Device Type N = N-channel Nominal Voltage (divided by 10) 60 = 600 V Optimization H = High Speed Version Number Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
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