Datasheet BIDNW30N60H3 (Bourns) - 9

BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT) Product Dimensions
E D2 E3 A M Q S
Symbol Min. Nom. Max.
R1 DIA. R DIA. A 4.90 5.00 5.10 E2 D1 (.193) (.197) (.201) D A1 2.31 2.41 2.51 (.091) (.095) (.099) E1 b 1.16 (.046) — 1.26 (.050) b1 — — 2.25 L1 (.089) L c 0.59 (.023) — 0.66 (.026) D 20.90 21.00 21.10 (.823) (.827) (.831) 16.55 16.85 e b c A1 b1 D1 16.25 (.640) (.652) (.663) 1.17 1.35 MM D2 1.05 DIMENSIONS: (.041) (.046) (.053) (INCHES) E 15.70 15.80 15.90 (.618) (.622) (.626)
Packaging Specifications
E1 13.10 13.30 13.50 (.516) (.524) (.531) BIDNW30N60H3 .. 30 pieces per tube E2 4.40 4.50 4.60 (.173) (.177) (.181) E3 1.50 1.60 1.70 (.059) (.063) (.067) e 5.436 BSC (.214) L 19.80 19.92 20.10 (.780) (.784) (.791) L1 — — 4.30 (.169) M 0.35 (.014) — 0.95 (.037) R 3.40 3.50 3.60 (.134) (.138) (.142)
Asia-Pacific:
Tel: +886-2 2562-4117 • Email: asiacus@bourns.com R1 7.00
EMEA:
Tel: +36 88 885 877 • Email: eurocus@bourns.com (.276) — 7.40 (.291)
The Americas:
Tel: +1-951 781-5500 • Email: americus@bourns.com Q 5.60
www.bourns.com
(.220) — 6.00 (.236) S 6.05 6.15 6.25 (.238) (.242) (.246) REV. 08/23 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.