Datasheet BIDW30N60T (Bourns) - 9

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) Product Dimensions
E A
Symbol Min. Nom. Max.
P DIA. Q A2 A 4.80 5.00 5.20 (.189) (.197) (.205) A1 2.21 2.41 2.59 (.087) (.095) (.102) E2 D A2 1.85 2.00 2.15 (.073) (.079) (.085) b 1.11 (.044) — 1.36 (.054) L1 b2 1.91 (.075) — 2.25 (.089) L b4 2.91 (.115) — 3.25 (.128) c 0.51 b2 b c A1 (.020) — 0.75 (.030) b4 e D 20.80 21.00 21.30 (.819) (.827) (.839) MM DIMENSIONS: 15.80 16.10 (INCHES) E 15.50 (.610) (.622) (.634) E2 4.40 5.00 5.20 (.173) (.197) (.205)
Packaging Specifications
BIDW30N60T ... 30 pieces per tube e 5.44 BSC (.214) L 19.72 19.92 20.22 (.776) (.784) (.796) L1 — — 4.30 (.169) P 3.40 (.134) — 3.80 (.150) Q 5.60 5.80 6.00 (.220) (.228) (.236)
Asia-Pacific:
Tel: +886-2 2562-4117 Email: [email protected]
EMEA:
Tel: +36 88 885 877 Email: [email protected]
The Americas:
Tel: +1-951 781-5500 Email: [email protected]
www.bourns.com
REV. 07/22 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.