Philips Semiconductors Product specification Voltage regulator diodes BZX79 series MBG801 MBG781 103 300 handbook, halfpage handbook, halfpage P I ZSM F (W) (mA) 102 200 (1) 10 100 (2) 1 0 10−1 1 duration (ms) 10 0.6 0.8 1.0 VF (V) (1) Tj = 25 °C (prior to surge). (2) T T j = 150 °C (prior to surge). j = 25 °C. Fig.3 Maximum permissible non-repetitive peak Fig.4 Typical forward current as a function of reverse power dissipation versus duration. forward voltage. MBG783 MBG782 0 10 handbook, halfpage handbook, halfpage 12 SZ SZ 11 (mV/K) 4V3 (mV/K) 10 − 9V1 1 5 3V9 8V2 7V5 3V6 6V8 6V2 5V6 − 5V1 2 3V3 0 3V0 4V7 2V4 2V7 −3 −5 0 20 40 60 I 0 4 8 12 16 20 Z (mA) IZ (mA) BZX79-B/C2V4 to BZX79-B/C4V3.BZX79-B/C4V7 to BZX79-B/C12. T T j = 25 to 150 °C. j = 25 to 150 °C. Fig.5 Temperature coefficient as a function of Fig.6 Temperature coefficient as a function of working current; typical values. working current; typical values. 2002 Feb 27 7 Document Outline FEATURES APPLICATIONS DESCRIPTION LIMITING VALUES ELECTRICAL CHARACTERISTICS THERMAL CHARACTERISTICS GRAPHICAL DATA PACKAGE OUTLINE SOD27 DATA SHEET STATUS DEFINITIONS DISCLAIMERS