Datasheet BC183 (CDIL)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC182, A, B BC183, A, B, C BC184, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T"
C B E
Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL BC182 BC183 BC184 UNITS Collector Emitter Voltage
VCEO 50 30 30 V
Collector Base Voltage
VCBO 60 45 45 V
Emitter Base Voltage
VEBO 6.0 V
Collector Current Continuous
IC 100 mA
Power Dissipation at Ta=25ºC
PD 350 mW
Derate Above 25ºC
2.8 mW/ºC
Power Dissipation at Tc=25ºC
PD 1.0 W
Derate Above 25ºC
8.0 mW/ºC
Operating And Storage Junction
T - 55 to +150
Temperature Range
j, Tstg ºC
THERMAL RESISTANCE Junction to Case
Rth (j-c) 125 ºC/W
Junction to Ambient in free air
Rth (j-a) 357 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Emitter Voltage
VCEO IC=2mA, IB=0
BC182
50 V
BC183/BC184
30 V
Collector Base Voltage
VCBO IC=10µA, IE=0
BC182
60 V
BC183/BC184
45 V
Emitter Base Voltage
VEBO IE=100µA, IC=0 6.0 V
Collector Cut Off Current
ICBO VCB=50V, IE=0
BC182
15 nA VCB=30V, IE=0
BC183/184
15 nA
Emitter Cut Off Current
IEBO VEB=4V, IC=0 15 nA
BC182_184Rev_1 201205E
Continental Device India Limited
Data Sheet
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