Datasheet IRF250 (Inchange Semiconductor)

isc N-Channel MOSFET Transistor IRF250 DESCRIPTION
·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
·Switching power supplies ·Switching converters,motor driver,relay driver
ABSOLUTE MAXIMUM RATINGS(TC=25
℃
) SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 30 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W
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Document Outline isc N-Channel MOSFET Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(TC=25℃) PARAMETER THERMAL CHARACTERISTICS isc N-Channel MOSFET Transistor