Datasheet IRF250 (Inchange Semiconductor) - 2

isc N-Channel MOSFET Transistor IRF250
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ELECTRICAL CHARACTERISTICS (TC=25
℃
) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 200 - - V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2 - 4 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=16A - - 0.085 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 - - ±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 - - 250 uA VSD Diode Forward Voltage IS=30A; VGS=0 - - 2.0 V
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Document Outline isc N-Channel MOSFET Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(TC=25℃) PARAMETER THERMAL CHARACTERISTICS isc N-Channel MOSFET Transistor