Datasheet IGB03N120H2 (Infineon)

IGB03N120H2
HighSpeed 2-Technology
C • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G •
2nd generation HighSpeed-Technology
E
for 1200V applications offers:
- loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A • Qualified according to JEDEC2 for target applications • PG-TO263-3-2 Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type V CE I C E off T j Marking Package
IGB03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO263-3-2
Maximum Ratings Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V Triangular collector current IC A TC = 25°C, f = 140kHz 9.6 T 3.9 C = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax ICpul s 9.9 Turn off safe operating area - 9.9 VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage VGE ±20 V Power dissipation Ptot 62.5 W TC = 25°C Operating junction and storage temperature Tj , Tstg -40...+150 °C Soldering temperature (reflow soldering, MSL1) - 245 2 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.4 Oct. 07