Datasheet IGB03N120H2 (Infineon) - 4

IGB03N120H2 12A I t =1µs c p 10A 10A 5µs T T N N 10µs 8A 1A T =80°C C OR CURRE 6A OR CURRE 50µs CT T =110°C CT C 100µs 4A , COLLE , COLLE 0,1A 500µs I C I C 2A Ic DC 0A 10Hz 100Hz 1kHz 10kHz 100kHz ,01A 1V 10V 100V 1000V f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. Safe operating area switching frequency
(D = 0, TC = 25°C, Tj ≤ 150°C) (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 82Ω) 12A 60W 10A 50W N T IO N 8A AT 40W IP ISS 6A D 30W OR CURRE R E CT W 20W 4A , PO , COLLE P tot I C 10W 2A 0W 0A 25°C 50°C 75°C 100°C 125°C 25°C 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function Figure 4. Collector current as a function of of case temperature case temperature
(Tj ≤ 150°C) (VGE ≤ 15V, Tj ≤ 150°C) Power Semiconductors 4 Rev. 2.4 Oct. 07