Datasheet IGB03N120H2 (Infineon) - 5

IGB03N120H2 10A 10A 9A 8A 8A T T N V =15V N 7A V =15V GE GE 12V 12V 6A 10V 6A 10V 8V 8V 5A OR CURRE 6V OR CURRE 6V CT 4A CT 4A 3A , COLLE , COLLE I C 2A I C 2A 1A 0A 0A 0V 1V 2V 3V 4V 5V 0V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics Figure 6. Typical output characteristics
(Tj = 25°C) (Tj = 150°C) E 12A G 3V A LT O 10A V N I =6A C O TI NT A I =3A C 8A R T =+150°C U 2V j T T =+25°C SA I =1.5A 6A j R C OR CURRE TE CT IT M 4A -E 1V OR , COLLE I C CT 2A , COLLE 0A 0V 3V 5V 7V 9V -50°C 0°C 50°C 100°C 150°C V CE(sat) VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter
(VCE = 20V)
saturation voltage as a function of junction temperature
(VGE = 15V) Power Semiconductors 5 Rev. 2.4 Oct. 07