Datasheet RTR020P02 (Rohm) - 2

RTR020P02 Tr ansistors z
Electrical characteristics
(Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±12V, VDS=0V Drain-source breakdown voltage V(BR) DSS −20 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −20V, VGS=0V Gate threshold voltage VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA − 100 135 mΩ ID= −2.0A, VGS= −4.5V Static drain-source on-state R ∗ DS (on) − 110 150 mΩ I resistance D= −2.0A, VGS= −4.0V − 180 250 mΩ ID= −1.0A, VGS= −2.5V Forward transfer admittance Y ∗ fs 1.2 − − S VDS= −10V, ID= −1.0A Input capacitance Ciss − 430 − pF VDS= −10V Output capacitance Coss − 80 − pF VGS=0V Reverse transfer capacitance Crss − 55 − pF f=1MHz Turn-on delay time td (on) ∗ − 11 − ns ID= −1.0A Rise time tr ∗ − 13 − ns VDD −15V VGS= −4.5V Turn-off delay time td (off) ∗ − 38 − ns RL=15Ω Fall time tf ∗ − 12 − ns RG=10Ω Total gate charge Qg − 4.9 − nC VDD −15V Gate-source charge Qgs − 1.2 − nC VGS= −4.5V Gate-drain charge Qgd − 1.3 − nC ID= −2.0A ∗Pulsed z
Body diode characteristics
(Source-drain) (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD − − −1.2 V IS= −0.8A, VGS=0V Rev.A 2/4 Document Outline 2.5V Drive Pch MOS FET RTR020P02