Datasheet 4N38M, H11D1M, H11D3M, MOC8204M (ON Semiconductor)

DATA SHEET www.onsemi.com
6-Pin DIP High Voltage Phototransistor Optocouplers 6 1 4N38M, H11D1M, H11D3M,
PDIP6 CASE 646BY
MOC8204M
Description
6 The 4N38M, H11D1M, H11D3M and MOC8204M are 6 1 1 phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN
PDIP6 PDIP6 CASE 646BZ CASE 646BX
silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package.
MARKING DIAGRAM Features
• High Voltage: ON ♦ MOC8204M, BVCEO = 400 V H11D1 ♦ H11D1M, BVCEO = 300 V VXYYQ ♦ H11D3M, BVCEO = 200 V • Safety and Regulatory Approvals: ON = Company Logo ♦ UL1577, 4,170 VACRMS for 1 Minute H11D1 = Specific Device Code • DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage V = DIN EN/IEC60747−5−5 Option (only appears on component ordered with
Applications
this option) • Power Supply Regulators X = One−Digit Year Code YY = Digit Work Week • Digital Logic Inputs Q = Assembly Package Code • Microprocessor Inputs • Appliance Sensor Systems
ORDERING INFORMATION
• Industrial Controls See detailed ordering and shipping information on page 410 of this data sheet. © Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. 0 MOC8204M/D