Datasheet 4N38M, H11D1M, H11D3M, MOC8204M (ON Semiconductor) - 2

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4N38M, H11D1M, H11D3M, MOC8204M SCHEMATICS
ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER
Figure 1. Schematics SAFETY AND INSULATION RATINGS Parameter Characteristic
Installation Classifications per DIN VDE < 150 VRMS I − IV 0110/1.89 Table 1, For Rated Mains Voltage < 300 VRMS I − IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test 1360 Vpeak with tm = 10 s, Partial Discharge < 5 pC Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test 1594 Vpeak with tm = 1 s, Partial Discharge < 5 pC VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over−Voltage 6000 Vpeak External Creepage ≥ 7 mm External Clearance ≥ 7 mm External Clearance (for Option TV, 0.4” Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm TS Case Temperature (Note 1) 175 °C IS,INPUT Input Current (Note 1) 350 mA PS,OUTPUT Output Power (Note 1) 800 mW RIO Insulation Resistance at TS, VIO = 500 V (Note 1) > 109 Ω As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. 1. Safety limit values – maximum values allowed in the event of a failure.
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