Datasheet 4N38M, H11D1M, H11D3M, MOC8204M (ON Semiconductor) - 3

link to page 3 link to page 3 link to page 3 link to page 3 link to page 3 link to page 3 link to page 3
4N38M, H11D1M, H11D3M, MOC8204M ABSOLUTE MAXIUM RATINGS Symbol Parameter Device Value Unit TOTAL DEVICE
TSTG Storage Temperature All −40 to + 125 °C TOPR Operating Temperature All −40 to + 100 °C TJ Junction Temperature All −40 to + 125 °C TSOL Lead Solder Temperature All 260 for 10 seconds °C PD Total Device Power Dissipation @ TA = 25°C All 420 mW Derate Above 25°C 3.5 mW/°C
EMITTER
IF Forward DC Current (Note 2) All 80 mA VR Reverse Input Voltage (Note 2) All 6.0 V IF(pk) Forward Current – Peak (1 μs pulse, 300 pps) (Note 2) All 3.0 A PD LED Power Dissipation @ TA = 25°C (Note 2) All 120 mW Derate Above 25°C 1.41 mW/°C
DETECTOR
PD Power Dissipation @ TA = 25°C All 300 mW Derate Linearly Above 25°C 4.0 mW/°C VCEO Collector to Emitter Voltage (Note 2) MOC8204M 400 V H11D1M 300 V H11D3M 200 V 4N38M 80 V VCBO Collector Base Voltage (Note 2) MOC8204M 400 V H11D1M 300 V H11D3M 200 V 4N38M 80 V VECO Emitter to Collector Voltage (Note 2) H11D1M, 7 V H11D3M, MOC8204M IC Collector Current (Continuous) All 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
www.onsemi.com 3