Datasheet BAS321 (Nexperia) - 3

Nexperia BAS321 General purpose diode 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit
VF forward voltage IF = 100 mA; Tj = 25 °C - - 1 V IF = 200 mA; Tj = 25 °C - - 1.25 V IR reverse current VR = 200 V; Tj = 25 °C - - 100 nA VR = 200 V; Tj = 150 °C - - 100 µA Cd diode capacitance VR = 0 V; f = 1 MHz; Tj = 25 °C - - 2 pF trr reverse recovery time IF = 30 mA; IR = 30 mA; RL = 100 Ω; - - 50 ns IR(meas) = 3 mA; Tj = 25 °C mbk927 mbg384 300 600 IF IF (mA) (mA) (1) (2) (3) 200 400 100 200 0 0 0 50 100 150 200 0 1 2 T V amb (°C) F (V) Device mounted on an FR4 PCB (1) Tj = 150 °C; typical values
Fig. 1. Maximum permissible continuous forward
(2) Tj = 25 °C; typical values
current as a function of ambient temperature
(3) Tj = 25 °C; maximum values
Fig. 2. Forward current as a function of forward voltage
mbg703 102 mbg381 102 I I R FSM (µA) (A) 10 10 (1) (2) 1 1 10- 1 10- 1 10- 2 1 104 103 10 102 0 100 200 t T p (µs) j (°C) Based on square wave currents (1) VR = VRmax; maximum values Tj = 25 °C prior to surge (2) VR = VRmax; typical values
Fig. 3. Maximum permissible non-repetitive peak Fig. 4. Reverse current as a function of junction forward current as a function of pulse duration temperature
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Product data sheet 9 October 2024 3 / 8
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents