Datasheet CLF24H4LS300P (Ampleon) - 5

CLF24H4LS300P RF power GaN-SiC HEMT Table 9. List of components
…continued See Figure 1.
Component Description Value Remarks
R4 resistor 0.0.1  1 % Farnell: 2363984 J1, J2 connector HUBER+SUHNER: 23_N-500-16/133_NE Q1 GaN-SiC transistor CLF24H4LS300P
7.2 Graphical data
amp01857 amp01858 40 80 40 80 Gp G ηD ηD Gp G ηD ηD (dB) (dB) (dB) (%) (%) (%) (dB) (dB) (dB) (%) (%) (%) (1) (1) (1) (1) (1) (1) (2) (2) (2) (2) (2) (2) 30 (3) (3) (3) 60 30 (3) (3) (3) 60 (3) (3) (3) (3) (3) (3) 20 40 (2) (2) (2) (2) (2) (2) 20 40 (1) (1) (1) (1) (1) (1) Gp G Gp G 10 20 10 20 0 0 0 0 0 100 200 300 400 500 0 100 200 300 400 500 PL (W) PL (W) Test signal: CW; VDS = 50 V; VGS = 5 V. Test signal: CW pulsed; VDS = 50 V; VGS = 5 V; (1) f = 2400 MHz tp = 100 s;  = 10 %. (2) f = 2450 MHz (1) f = 2400 MHz (3) f = 2500 MHz (2) f = 2450 MHz (3) f = 2500 MHz
Fig 2. Power gain and drain efficiency as function of Fig 3. Power gain and drain efficiency as function of output power; typical values output power; typical values 7.3 Impedance information Table 10. Simulated test circuit impedances f Zi ZL ZL(2H) (MHz) ( ) ( ) ( )
2400 3.82  8.04j 0.79 + 0.13j 1.95 + 8.64j 2450 3.29  7.75j 0.77 + 0.14j 2.95 + 10.73j 2500 2.85  7.43j 0.71 + 0.18j 5.10 + 13.63j CLF24H4LS300P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2024. All rights reserved.
Product data sheet Rev. 1 — 30 July 2024 5 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents