Datasheet CLP24H4S30P (Ampleon) - 4

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CLP24H4S30P RF power GaN-SiC HEMT Table 8. Ruggedness performance
RF performance at Tamb = 25 C; VGS = 4 V; in a class-C demo.
Test signal f PL VSWR VDS Result (MHz) (W) (V)
CW 2450 30 10 : 1 at all phase angles 70 no device degradation pulsed CW [1] 2450 30 10 : 1 at all phase angles 70 no device degradation [1] tp = 100 s;  = 20 %.
7. Application information 7.1 Test circuit
30 mm C9 C5 C4 C3 C6 C7 C8 L1 L2 20 mm C11 C1 Q1 C12 C2 C10 amp02040 Printed-Circuit Board (PCB): TC350; thickness = 0.508 mm with Type II vias. See Table 9 for a list of components.
Fig 2. Component layout for test circuit Table 9. List of components
See Figure 2 for component layout.
Component Description Value Remarks
C1, C3, C6, multilayer ceramic chip capacitor 100 pF ATC600F101JW250XT C12 C4, C7 multilayer ceramic chip capacitor 1000 pF ATC800B102KW50XT C5, C8 multilayer ceramic chip capacitor 4.7 F, 100 V TDK: C2012X7R1H475K C2 multilayer ceramic chip capacitor 1.2 pF ATC600F1R2BW250XT C10, C11 multilayer ceramic chip capacitor 1.4 pF ATC600F1R4BW250XT C9 electrolytic capacitor 1000 F, 63 V L1 inductor 12 nH Coilcraft: 0805HP-12NXGRC L2 inductor 6.8 nH Coilcraft: 0805HP-6N8XGRC Q1 GaN transistor CLP24H4S30P CLP24H4S30P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2024. All rights reserved.
Product data sheet Rev. 1 — 23 July 2024 4 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 2.1 Pinning 2.2 Pin description 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents