Datasheet FOD410 (ON Semiconductor) - 3

FOD410, FOD4108, FOD4116, FOD4118 ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, Unless otherwise specified)
Symbol Parameter Device Value Unit
TSTG Storage Temperature All −55 to +150 °C TOPR Operating Temperature All −55 to +100 °C TJ Junction Temperature All −55 to +125 °C TSOL Lead Solder Temperature All 260 for 10 sec °C Total Device Power Dissipation @ 25°C All 500 mW PD(TOTAL) Derate Above 25°C All 6.6 mW/°C
EMITTER
IF Continuous Forward Current All 30 mA VR Reverse Voltage All 6 V Total Power Dissipation 25°C Ambient All 50 mW PD(EMITTER) Derate Above 25°C All 0.71 mW/°C
DETECTOR
FOD410, FOD4116 600 VDRM Off−State Output Terminal Voltage V FOD4108, FOD4118 800 ITSM Peak Non−Repetitive Surge Current (single cycle 60 Hz sine wave) All 3 Apeak ITM Peak On−State Current All 300 mApeak Total Power Dissipation @ 25°C Ambient All 450 mW PD(DETECTOR) Derate Above 25°C All 5.9 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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