Datasheet FOD410 (ON Semiconductor) - 5

FOD410, FOD4108, FOD4116, FOD4118 ZERO CROSSING CHARACTERISTICS Symbol Parameter Test Conditions Device Min Typ Max Unit
VINH Inhibit Voltage (MT1−MT2 IF = Rated IFT All − 8 25 Vpeak Voltage above which device will not trigger) IDRM2 Leakage in Inhibit State IF = Rated IFT, Rated VDRM, Off−State All − 20 200 mA
ISOLATION CHARACTERISTICS
VISO Steady State Isolation f = 60 Hz, t = 1 Minute (Note 5) All 5,000 − − VACRMS Voltage 5. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1, 2 and 3 are common, and pins 4, 5 and 6 are common. 5,000 VACRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration.
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