Datasheet FOD410 (ON Semiconductor) - 8

FOD410, FOD4108, FOD4116, FOD4118 TYPICAL CHARACTERISTICS
(continued) 2.2 10 Normalized to TA = 25°C VD = 800 V, IBD (mA) Normalized to T 2.0 A = 25°C 1.8 ATE CURRENT −ST 1.6 1 1.4 1.2 1.0 – NORMALIZED HOLDING CURRENT – NORMALIZED OFF I H I DRM 0.8 0.1 −60 −40 −20 0 20 40 60 80 100 −60 −40 −20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) TA – AMBIENT TEMPERATURE (°C)
Figure 9. Normalized Holding Current (IH) Figure 10. Normalized Off−State Current vs. Ambient Temperature (TA) (IDRM) vs. Ambient Temperature (TA)
1.2 2.5 °C) IF = Rated IFT VDRM = 600 V °C) IF = Rated IFT Normalized to TA = 25°C (25 Normalized to TA = 25°C (25 2.0 1.1 INH DRM2 ) / I ) / V A A 1.5 (T (T 1.0 INH DRM2 1.0 0.9 (NORM) = V 0.5 (NORM) = I INHV I DRM2 0.8 0.0 −60 −40 −20 0 20 40 60 80 100 −60 −40 −20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) TA – AMBIENT TEMPERATURE (°C)
Figure 11. Normalized Inhibit Voltage Figure 12. Normalized Leakage in Inhibit (VINH) vs. Ambient Temperature (TA) State (IDRM2) vs. Ambient Temperature (TA)
350 ITP = f(TA) (mA) 300 250 ATE CURRENT 200 −ST 150 100 – PEAK ON I TP 50−60 −40 −20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C)
Figure 13. Current Reduction www.onsemi.com 8