Philips SemiconductorsProduct specificationSchottky barrier diodesBAT81; BAT82; BAT83FEATURESDESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static • High breakdown voltage discharges, encapsulated in a hermetically-sealed subminiature SOD68 • (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance. handbook, halfpage k a APPLICATIONS MAM193 • Ultra high-speed switching • Voltage clamping • Protection circuits Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol. • Blocking diodes. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT VR continuous reverse voltage BAT81 − 40 V BAT82 − 50 V BAT83 − 60 V IF continuous forward current − 30 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 150 mA IFSM non-repetitive peak forward current tp ≤ 10 ms − 500 mA Tstg storage temperature −65 150 °C Tj junction temperature − 125 °C 1996 Mar 20 2
Купить BAT83 на РадиоЛоцман.Цены — от 3.30 до 29 ₽
