2N6236-2N6241 High-reliability discrete products SILICON CONTROLLED RECTIFIERS and engineering services since 1977FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGSRatingSymbolValueUnitRepetitive peak forward and reverse blocking voltage (1) (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 30 2N6237 VDRM 50 Volts 2N6238 VRRM 100 2N6239 200 2N6240 400 2N6241 600 Non-repetitive peak reverse blocking voltage (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 50 2N6237 100 V Volts 2N6238 RSM 150 2N6239 250 2N6240 450 2N6241 650 Average on-state current (TC = -40 to +90°C) IT(AV) 2.6 Amps (TC = 100°C) 1.6 Surge on-state current (1/2 sine wave, 60Hz, TC = 90°C) ITSM 25 Amps (1/2 sine wave, 1.5ms, TC = 90°C) 35 Circuit fusing (TC = -40 to +110°C, t = 8.3ms) I2t 2.6 A2s Peak gate power (pulse width = 10µs, TC = 90°C) PGM 0.5 Watts Average gate power (t = 8.3ms, TC = 90°C) PG(AV) 0.1 Watts Peak forward gate current IGM 0.2 Amps Peak reverse gate voltage VRGM 6 Volts Operating junction temperature range TJ -40 to 110 °C Storage temperature range Tstg -40 to 150 °C Stud torque 6 In. lb. Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. THERMAL CHARACTERISTICSCharacteristicSymbolMaxUnitThermal resistance, junction to case RӨJC 3 °C/W Thermal resistance, junction to ambient RӨJA 75 °C/W Rev. 20130128
