Datasheet BC307 (Fairchild) - 3
Производитель | Fairchild |
Описание | PNP Epitaxial Silicon Transistor in TO-92 Package |
Страниц / Страница | 5 / 3 — BC307/. Typical Characteristics. 308/. -50. 1000. -45. 309. -40. -35. … |
Формат / Размер файла | PDF / 54 Кб |
Язык документа | английский |
BC307/. Typical Characteristics. 308/. -50. 1000. -45. 309. -40. -35. 100. -30. -25. -20. -15. -10. -0.1. -100. -12. -14. -16. -18

26 предложений от 23 поставщиков Bipolar (BJT) Transistor PNP 25 V 100 mA 130MHz 500 mW Through Hole TO-92-3 |
| BC308 ON Semiconductor | 2.93 ₽ | |
| BC308A Fairchild | по запросу | |
| BC308B-18 Fairchild | по запросу | |
| BC308A-GEG/ITT Fairchild | по запросу | |
Модельный ряд для этого даташита
Текстовая версия документа
BC307/ Typical Characteristics 308/ -50 1000 -45
I = -400µA VCE = -5V B
309 -40
I = -350µA B I = -300µA N
-35
B
100
I = -250µA GAI
-30
B OR CURRENT
-25
I = -200µA CT B E L URRENT L
-20
I = -150µA B
10
, CO
-15
I = -100µA , DC C B A] [m h FE
-10
I C I = -50µA B
-5 1 -0.1 -1 -10 -100 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
V [V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT CE
Figure 1. Static Characteristic Figure 2. DC current Gain
E
-10
G
-100
A LT I V C = -10 IB CE = -5V O V ION RRENT T
-1
VBE(sat)
-10
URA R CU T O A ], S ECT L [V L at)
-0.1 -1
(s CE VCE(sat) A], CO V [m t), a I C (s BEV
-0.01 -0.1 -0.1 -1 -10 -100 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter Capacitance Collector-Emitter Saturation Voltage 1000
DUCT f=1MHz O VCE = -5V I R E = 0 P
10
H NCE A T CI NDWIDT A A
100
B IN- ], CAP A F G [p ob NT C RRE ], CU z
1
H
10 -1 -10 -100 -1 -10
[M f T VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002