Datasheet BD909 (STMicroelectronics) - 2

BD909 / BD910 / BD911 / BD912 THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.4 oC/W
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off for
BD909/910
VCB = 80 V 500 µA Current (IE = 0) for
BD911/912
VCB = 100 V 500 µA Tcase = 150 oC for
BD909/910
VCB = 80 V 5 mA for
BD911/912
VCB = 100 V 5 mA ICEO Collector Cut-off for
BD909/910
VCE = 40 V 1 mA Current (IB = 0) for
BD911/912
VCE = 50 V 1 mA IEBO Emitter Cut-off Current VEB = 5 V 1 mA (IC = 0) VCEO(sus)∗ Collector-Emitter IC = 100 mA for
BD909/910
80 V Sustaining Voltage for
BD911/912
100 V (IB = 0) VCE(sat)∗ Collector-Emitter IC = 5 A IB = 0.5 A 1 V Saturation Voltage IC = 10 A IB = 2.5 A 3 V VBE(sat)∗ Base-Emitter IC = 10 A IB = 2.5 A 2.5 V Saturation Voltage VBE∗ Base-Emitter Voltage IC = 5 A VCE = 4 V 1.5 V hFE∗ DC Current Gain IC = 0.5 A VCE = 4 V 40 250 IC = 5 A VCE = 4 V 15 150 IC = 10 A VCE = 4 V 5 fT Transition frequency IC = 0.5 A VCE = 4 V 3 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area Derating Curves 2/6