Datasheet P6KE (Taiwan Semiconductor) - 5

P6KE SERIES
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve
100 125 A ) I PP W NON-REPETITIVE ( K ) NT % 100 , PULSE WAVEFORM ( R SHOWN in Fig.3 RE E 10 GE A OW NT OR CUR E 75 P ) E RC PP E S P L R( U E IN P P 50 OW K 1 ING P T A E E RA P , ULS DE P 25 K PPM A P E P 0.1 0 0.1 1 10 100 1000 10000 0 25 50 75 100 125 150 175 tp, PULSE WIDTH, (μs) T , AMBIENT TEMPERATURE (°C) A
Fig.3 Clamping Power Pulse Waveform Fig.4 Maximum Non-Repetitive Forward Surge Current
100 140 Pulse width(td) is defined ) A as the point where the peak ( %( T 120 current decays to 50% of I T PPM N E N E R Rise time tr=10μs to 100% R R 100 R U U C Peak value C 80 E IPPM GE 8.3ms single half sine wave S Half value-I /2 PPM R L U UNIDIRECTIONAL ONLY U 60 10/1000μs, waveform S P D K R A A 40 E W P , 20 FOR I PPM td K A 10 0 E P 1 10 100 0 0.5 1 1.5 2 2.5 3 NUMBER OF CYCLES AT 60 Hz t, TIME (ms) 5 Version: P2203