Datasheet J270 (InterFET) - 2

InterFET
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J270-1 Electrical Characteristics Maximum Ratings
(@ TA = 25°C, Unless otherwise specified)
Parameters Value Unit
VRGS Reverse Gate Source and Gate Drain Voltage 30 V IFG Continuous Forward Gate Current 50 mA PD Continuous Device Power Dissipation 360 mW P Power Derating 2.8 mW/°C TJ Operating Junction Temperature -55 to 125 °C TSTG Storage Temperature -65 to 200 °C
Static Characteristics
(@ TA = 25°C, Unless otherwise specified)
J270 J271 Parameters Conditions Min Max Min Max Unit
Gate to Source V(BR)GSS V Breakdown Voltage DS = 0V, IG = 1μA 30 30 V Gate to Source IGSS V Reverse Current GS = 10V, VDS = 0V 200 200 pA Gate to Source VGS(OFF) V Cutoff Voltage DS = -10V, VGS = 0V 0.5 2 1.5 4.5 V Drain to Source V I GS = 0V, VDS = -10V DSS -2 15 -6 -50 mA Saturation Current (Pulsed)
Dynamic Characteristics
(@ TA = 25°C, Unless otherwise specified)
J270 J271 Parameters Conditions Min Max Min Max Unit
Forward GFS V Transconductance DS = -10V, VGS = 0V, f = 1kHz 6 15 8 18 mS Ciss Input Capacitance VDS = -10V, VGS = 0V, f = 1MHz 32 32 pF Reverse Transfer Crss V Capacitance DS = -10V, VGS = 0V, f = 1MHz 4 4 pF en Noise Voltage VDS = 10V, ID = 5mA, f = 1kHz 6 (typ) 6 (typ) nV/√Hz J270-1 2 of 4 InterFET Corporation Document Number: IF35090.R00 www.InterFET.com June, 2019