Ordering number : EN6920C MCH6613 Power MOSFET http://onsemi.com 30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6 Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting Excellent ON-resistance characteristic 1.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions N-channel VDSS VGSS Gate to Source Voltage Drain Current (DC) Allowable Power Dissipation ID IDP PD Channel Temperature Storage Temperature Drain Current (Pulse) PW≤10μs, duty cycle≤1% P-channel Unit 30 -30 V ±10 ±10 V 0.35 -0.2 A 1.4 -0.8 When mounted on ceramic substrate (900mm2×0.8mm) 1unit A 0.8 W Tch 150 °C Tstg -55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions unit : mm (typ) 7022A-006 6 5 Package Shipping memo MCH6613-TL-E MCPH6 SC-88, SC-70-6, SOT-363 3,000 pcs./reel Pb-Free Packing Type : TL 2 TL 3 0.65 FM LOT No. 0 to 0.02 1 Marking 4 LOT No. 0.25 MCH6613-TL-E 0.15 2.1 1.6 0.25 2.0 Device 0.3 0.07 0.85 Electrical Connection 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 MCPH6 6 5 4 1 2 3 Semiconductor Components Industries, LLC, 2013 July, 2013 71013 TKIM TC-00002962/71112 TKIM/52506PE MSIM TB-00002278/52101 TSIM TA-324 No.6920-1/8
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