Datasheet PSMN9R0-30YL (Nexperia) - 7

NXP Semiconductors PSMN9R0-30YL N-channel 30 V 8 mΩ logic level MOSFET in LFPAK
003aac542 003aac537 1800 12 C Ciss (pF) RDSon 1600 (mΩ) 10 1400 1200 Crss 8 1000 800 6 2 4 6 8 10 2 4 6 8 V 10 V GS (V) GS (V)
Fig 9. Input and reverse transfer capacitances as a Fig 10. Drain-source on-state resistance as a function function of gate-source voltage; typical values of gate-source voltage; typical values
003aab271 003a a c337 10-1 3 ID (A) VGS(th) 10-2 (V) min typ max 2 max 10-3 typ 10-4 min 1 10-5 10-6 0 0 1 2 VGS (V) 3 -60 0 60 120 180 Tj (°C)
Fig 11. Sub-threshold drain current as a function of Fig 12. Gate-source threshold voltage as a function of gate-source voltage junction temperature
PSMN9R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 9 March 2011 7 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents