Datasheet FGD3050G2V (ON Semiconductor)

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DATA SHEET www.onsemi.com
ECOSPARK 2 Ignition IGBT COLLECTOR
300 mJ, 500 V, N−Channel Ignition IGBT
R1 GATE FGD3050G2V R2
Features
EMITTER SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drive AEC−Q101 Qualified and PPAP Capable 4 These Device is Pb−Free and are RoHS Compliant
Applications
1 2 3 Automotive Ignition Coil Driver Circuits High Current Ignition System
DPAK (SINGLE GAUGE)
Coil on Plug Application
CASE 369C MAXIMUM RATINGS
(TJ = 25C unless otherwise noted)
Symbol Parameter Value Unit MARKING DIAGRAM
BVCER Collector to Emitter Breakdown 500 V Voltage (IC = 1 mA) BVECS Emitter to Collector Voltage − Reverse 20 V ALYWW Battery Condition (IC = 10 mA) FGD E 3050G2G SCIS25 Self Clamping Inductive Switching 300 mJ Energy (Note 1) A = Assembly Location ESCIS150 Self Clamping Inductive Switching 180 mJ Energy (Note 2) Y = Year WW = Work Week IC25 Collector Current Continuous 32 A FGD3050G2= Device Code at VGE = 4.0 V, TC = 25C G = Pb−Free Package IC110 Collector Current Continuous 27 A at VGE = 4.0 V, TC = 110C VGEM Gate to Emitter Voltage Continuous 10 V
ORDERING INFORMATION
PD Power Dissipation Total, TC = 25C 150 W See detailed ordering and shipping information on page 2 Power Dissipation Derating, for TC > 1.1 W/C of this data sheet. 25C TJ Operating Junction Temperature Range −40 to +175 C TSTG Storage Junction Temperature Range −40 to +175 C TL Max. Lead Temperature for Soldering 300 C (Leads at 1.6 mm from case for 10 s) TPKG Max. Lead Temperature for Soldering 260 C (Package Body for 10 s) ESD Electrostatic Discharge Voltage at 4 kV 100 pF, 1500 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self clamped inductive Switching Energy (ESCIS25) of 335 mJ is based on the test conditions that is starting TJ = 25C, L = 3 mHy, ISCIS = 14.2 A, RGE = 1 k VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 2. Self Clamped inductive Switching Energy (ESCIS150) of 180 mJ is based on the test conditions that is starting TJ = 150C, L = 3mHy, ISCIS = 11 A, RGE = 1 k VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.  Semiconductor Components Industries, LLC, 2019
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Publication Order Number:
September, 2024 − Rev. 2 FGD3050G2V/D